Northrop Grumman Engineer Microelec Semiconductor 4 in Baltimore, Maryland
Engineer Microelec Semiconductor 4
Requisition ID: 18004396
Location(s): United States-Maryland-Baltimore
US Citizenship Required for this Position: Yes
Relocation Assistance: Relocation assistance may be available
Travel: Yes, 10 % of the Time
The Advanced Technologies group of Northrop Grumman Mission Systems is seeking an independent and resourceful Semiconductor Engineer 4- Materials Development for our Advanced Technology Lab (ATL) - located outside of Baltimore, Maryland - where we design, manufacture, and test semiconductor products for internal and commercial production customers as well as emerging technology programs. Northrop Grumman’s ATL semiconductor foundry is a unique capability supporting a range of production microelectronic devices (Silicon, Gallium Arsenide, Gallium Nitride, Silicon Carbide, Carbon Nanotubes) and providing leading edge technology development in superconducting electronics. Our devices enable a number of Northrop Grumman’s ground based radars, airborne radars, and space systems. Join us for the chance to work with an experienced and talented team while helping serve your country. Enjoy the opportunity to grow and learn with a variety of challenging projects in production, R&D, ongoing long-term programs, and new programs targeting future military platforms.
The Materials Development engineer is responsible for the design, development, improvement, and testing of novel / complex thin film materials. The individual will interface with multiple research programs to solve complex technical challenges. The candidate must be capable of working in a fast paced environment while developing solutions to multiple areas including superconducting, III-V, Si, and carbon based electronics.
Ph.D. in Chemistry, Materials Science, Electrical Engineering, or a similar discipline with at least 3 years of experience in materials development in a semiconductor environment.
Proven track record of innovative research in novel / complex dielectrics.
Familiarity with thin film characterization techniques (AFM, XRD, XRR, optical spectroscopy, etc.)
Excellent communication skills both verbal and written and the ability to work in a team environment.
Significant experience with dielectric and metal CVD / ALD process development and optimization.
Product development experience
Previous principal investigator / project manager experience
8 or more years’ experience in materials development (including graduate work)
Publications and presentations
Previous IP development
Ability to obtain and maintain Top Secret / SCI clearance
Northrop Grumman is committed to hiring and retaining a diverse workforce. We are proud to be an Equal Opportunity/Affirmative Action Employer, making decisions without regard to race, color, religion, creed, sex, sexual orientation, gender identity, marital status, national origin, age, veteran status, disability, or any other protected class. For our complete EEO/AA and Pay Transparency statement, please visit www.northropgrumman.com/EEO . U.S. Citizenship is required for most positions.
Title: Engineer Microelec Semiconductor 4
Requisition ID: 18004396